Gain Characterization of p-Doped 1.3 μm InAs Quantum Dot Lasers on Silicon: Theory and Experiment

We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. The inhomogeneous broadening is extracted to be 10 meV. A p-doped quantum dot active region has been found to show lower transparency current and higher material gain.