Temperature dependence of carrier mobility in Si wafers measured by infrared photocarrier radiometry
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[1] R. Hall. Electron-Hole Recombination in Germanium , 1952 .
[2] A. Mandelis,et al. Carrier-density-wave transport property depth profilometry using spectroscopic photothermal radiometry of silicon wafers II: Experimental and computational aspects , 2003 .
[3] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[4] A. Mandelis,et al. Noncontact measurement of transport properties of long‐bulk‐carrier‐lifetime Si wafers using photothermal radiometry , 1996 .
[5] J. Bardeen,et al. Deformation Potentials and Mobilities in Non-Polar Crystals , 1950 .
[6] W. Gärtner,et al. Nernst and Ettingshausen Effects in Silicon between 300°K and 800°K , 1960 .
[7] T. T. Mnatsakanov,et al. Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level , 2001 .
[9] A. Mandelis,et al. Noncontacting photothermal radiometry of SiO2/Si MOS capacitor structures , 1997 .
[10] K. Sakui,et al. Temperature dependence of mobility and Hall coefficient factor for holes of highly pure silicon , 1982 .
[11] A. Mandelis. Laser infrared photothermal radiometry of semiconductors: principles and applications to solid state electronics , 1998 .
[12] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[13] R. L. Watters,et al. Drift and Conductivity Mobility in Silicon , 1956 .