TDDB evaluations and modeling of very high-voltage (10kV) capacitors
暂无分享,去创建一个
[1] J. Suehle,et al. Low electric field breakdown of thin SiO/sub 2/ films under static and dynamic stress , 1997 .
[2] R. Bolam,et al. Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).
[3] C. Radens,et al. Thickness and polarity dependence of intrinsic breakdown of ultra-thin reoxidized-nitride for DRAM technology applications , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[4] Joe W. McPherson,et al. Determination of the nature of molecular bonding in silica from time-dependent dielectric breakdown data , 2004 .
[5] W. R. Hunter,et al. Experimental evidence for voltage driven breakdown models in ultrathin gate oxides , 2000, 2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059).
[6] J. McPherson,et al. A Statistical Evaluation of the Field Acceleration Parameter Observed During Time Dependent Dielectric Breakdown Testing of Silica-Based Low-k Interconnect Dielectrics , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.