Regular step formation on concave-shaped surfaces on 6H-SiC(0 0 0 1)

[1]  J. Brault,et al.  Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates , 2003 .

[2]  A. Leycuras,et al.  Structure and morphology of concave-shaped surfaces on 6H–SiC(0 0 0 1) after H2 etching , 2002 .

[3]  S. Tong,et al.  Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy , 2000 .

[4]  U. Starke,et al.  Surface structure of hexagonal SiC surfaces : key to crystal growth and interface formation? , 2000 .

[5]  J. Edgar,et al.  Gaseous etching of 6H–SiC at relatively low temperatures , 2000 .

[6]  A. Leycuras.  Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor , 2000 .

[7]  N. Ohtani,et al.  Step bunching behaviour on the {0 0 0 1} surface of hexagonal SiC , 2000 .

[8]  A. Ellison,et al.  In situ substrate preparation for high-quality SiC chemical vapour deposition , 1997 .

[9]  E. Janzén,et al.  Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching , 1996 .

[10]  Wang,et al.  Interactions of Br with Si(111)-7 x 7: Chemisorption, step retreat, and terrace etching. , 1995, Physical review. B, Condensed matter.

[11]  H. Neddermeyer,et al.  Scanning tunneling microscopy on concave-shaped Si(100) substrates , 1995 .

[12]  R. Kliese,et al.  An STM study of mechanochemically prepared Si(111) substrates : an extended set of vicinal surfaces , 1993 .

[13]  H. Matsunami,et al.  Crystal growth of SiC by step-controlled epitaxy , 1990 .

[14]  C. Jayaprakash,et al.  Simple model for crystal shapes: Step-step interactions and facet edges , 1984 .