Ballistic transport in GaN/AlGaN resonant tunneling diodes

In this work we theoretically study the vertical transport in GaN/AlGaN resonant tunneling diodes in the ballistic regime. Heterostructures based on III-nitride compounds are characterized by a large conduction band discontinuity and a presence of an internal electric field, both of which have important effects on the electronic transport. Using the transfer matrix formalism, we investigate the effect of the energetic barrier height on the resonant current. Our calculations show an increase in the peak to valley ratio (PVR) with increasing Al content of the barriers which arises from the large decrease in the valley current. Furthermore, we show that the current resonances are different for positive and negative applied voltages. We also demonstrate that, due to the asymmetry of the conduction band profile, only one current direction leads to a significant PVR. Finally, we present an approach to achieve large PVR in both current directions by reducing the asymmetry induced by the internal field.

[1]  Enrico Bellotti,et al.  Monte Carlo simulation of terahertz quantum cascade laser structures based on wide-bandgap semiconductors , 2009 .

[2]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[3]  A. E. Belyaev,et al.  Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)] , 2003 .

[4]  R. Maciejko,et al.  Propagation matrix formalism and efficient linear potential solution to Schrödinger’s equation , 2001 .

[5]  F. Glas.  Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires , 2006 .

[6]  Jen-Inn Chyi,et al.  Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)] , 2003 .

[7]  M. Razeghi,et al.  AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition , 2010 .

[8]  Vincenzo Fiorentini,et al.  MACROSCOPIC POLARIZATION AND BAND OFFSETS AT NITRIDE HETEROJUNCTIONS , 1998 .

[9]  F. Julien,et al.  Systematic experimental and theoretical investigation of intersubband absorption in GaN/AlN quantum wells , 2006 .

[10]  C. cohen-tannoudji,et al.  Quantum Mechanics: , 2020, Fundamentals of Physics II.

[11]  Jen-Inn Chyi,et al.  AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy , 2002 .

[12]  Werner Schrenk,et al.  Negative differential resistance in dislocation-free GaN/AlGaN double-barrier diodes grown on bulk GaN , 2006 .

[13]  Quantum transport in GaN/AlN double-barrier heterostructure nanowires. , 2010, Nano letters.

[14]  A. Carlo,et al.  Modeling of GaN-based resonant tunneling diodes: Influence of polarization fields , 2002 .

[15]  G. Gildenblat,et al.  Airy's functions implementation of the transfer-matrix method for resonant tunneling in variably spaced finite superlattices , 1996 .

[16]  A. E. Belyaev,et al.  Current–voltage instabilities in GaN/AlGaN resonant tunnelling structures , 2003 .

[17]  James S. Speck,et al.  Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates , 2002 .

[18]  Bruno Ricco,et al.  Physics of resonant tunneling. The one-dimensional double-barrier case , 1984 .

[19]  Christensen,et al.  Optical and structural properties of III-V nitrides under pressure. , 1994, Physical review. B, Condensed matter.

[20]  J. A. Roussos,et al.  Photoionisation Spectroscopy of Traps in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy , 2003 .

[21]  Jerry R. Meyer,et al.  Band parameters for nitrogen-containing semiconductors , 2003 .

[22]  L. Largeau,et al.  Investigation of the electronic transport in GaN nanowires containing GaN/AlN quantum discs , 2010, Nanotechnology.

[23]  M. Manfra,et al.  Electron scattering in AlGaN/GaN structures , 2003 .