论文信息 - Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

This letter reports on the reduction of threading dislocation densities in AlN films via lateral epitaxial overgrowth by hydride vapor phase epitaxy. A variety of different stripe patterns were used to produce fully coalesced AlN films. Transmission electron microscopy (TEM) was used to assess the structural quality of these films. TEM determined that the dislocation density in the laterally grown wing regions was less than 8.3×106cm−2 as compared to 1.8×109cm−2 in the seed regions. Atomic force microscopy revealed that the films have a smooth surface morphology with a rms roughness of 0.71nm over 10×10μm2 sampling areas.

[1] D. S. Kamber,et al. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy , 2006 .

[2] Asif Khan,et al. Pulsed lateral epitaxial overgrowth of aluminum nitride on sapphire substrates , 2006 .

[3] S. Denbaars,et al. Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates , 2005 .

[4] Yiying Wu,et al. Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN , 2004 .

[5] A. Sakai,et al. Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth , 2000 .

[6] S. Haffouz,et al. Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy , 1998 .

[7] James S. Speck,et al. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition , 1998 .

[8] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .

[9] R. J. Paff,et al. Thermal expansion of AlN, sapphire, and silicon , 1974 .