Promotion of High-Speed Copper-Filling Performance for Interconnections with Increasing Aspect-Ratio Using Compound Additives

Interconnections are essential for integrating the packaging substrate, and defect-free copper-filling can further improve the reliability in through holes (THs). The coating properties and filling processes are mainly dominated by the interplays among additives in the direct current electroplating. The acidic copper sulfate electroplating solution contained three typical convection-dependent additives and chloride ions (Cl−). The THs with aspect ratios (ARs) of 6.25, 5, and 4.17 (thickness of 500 μm) were selected as the study subjects. The effects of Cl− and ARs on the interactions among the additives were investigated in detail using electrochemical measurements, which were verified by the THs filling experiments. The additive compounds present a convection enhanced inhibition effect and cathodic polarization, leading to a copper filling capacity increase with ARs and the amelioration of copper compactness and corrosion resistance. The defect-free copper filling of THs and a uniform mirror bright surface circuit can be achieved simultaneously using compound additives at a relatively high speed.

[1]  Yang Peng,et al.  Unique sandwich design of high-efficiency heat-conducting phosphor-in-glass film for high-quality laser-driven white lighting , 2022, Journal of Advanced Ceramics.

[2]  Yang Peng,et al.  Enhancing Opto-Thermal Performances of White Laser Lighting by High Reflective Phosphor Converter , 2022, SSRN Electronic Journal.

[3]  Mingxiang Chen,et al.  Computational and experiments exploration of convection on Cu filling characteristics of multiple aspect-ratio micro through-holes , 2022, Electrochimica Acta.

[4]  L. Jiaxin,et al.  Copper Filling of High Aspect Ratio Through Ceramic Holes: Effect of Convection on Electrochemical Behavior of Additives , 2021, 2021 22nd International Conference on Electronic Packaging Technology (ICEPT).

[5]  Yang Peng,et al.  Electrochemical behaviors of additives in high Cu(II) concentration solution for high-aspect-ratio through ceramic holes filling , 2021, Materials Today Communications.

[6]  H. Barnaby,et al.  Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs , 2021, IEEE Transactions on Electron Devices.

[7]  A. Gewirth,et al.  Interfacial Leveler-Accelerator Interactions in Cu Electrodeposition , 2021 .

[8]  M. Sone,et al.  Electrochemical Investigation of Cu Electroplating with Supercritical CO2 Emulsion Using a Rotating Disk Electrode under High Pressure , 2020, Journal of The Electrochemical Society.

[9]  Mingxiang Cheng,et al.  Study on Direct Current Cu Electroplating in Through Ceramic Holes for High-power LED Packaging , 2020, 2020 21st International Conference on Electronic Packaging Technology (ICEPT).

[10]  Young Gyu Kim,et al.  Structural Influence of Terminal Functional Groups on TEG-Based Leveler in Microvia Filling , 2020, Journal of The Electrochemical Society.

[11]  Yang Peng,et al.  Direct ink writing of 3D cavities for direct plated copper ceramic substrates with kaolin suspensions , 2019, Ceramics International.

[12]  Yuanming Chen,et al.  A comparison of typical additives for copper electroplating based on theoretical computation , 2018 .

[13]  Gianaurelio Cuniberti,et al.  DFT study of interaction of additives with Cu(111) surface relevant to Cu electrodeposition , 2018, Journal of Applied Electrochemistry.

[14]  K. Nonaka,et al.  Spectroscopic and Electrochemical Analysis of Cu(I) in Electroplating Solution and Evaluation of Plated Films , 2018 .

[15]  Shendu Yang,et al.  Electrodeposition of Copper for Three-Dimensional Metamaterial Fabrication. , 2017, ACS applied materials & interfaces.

[16]  Zhen Chen,et al.  Void-free and high-speed filling of through ceramic holes by copper electroplating , 2017, Microelectron. Reliab..

[17]  Chia-Jung Yang,et al.  Size Control of Copper Grains by Optimization of Additives to Achieve Flat-Top Copper Pillars through Electroplating , 2017 .

[18]  Wei-Ping Dow,et al.  Effects of Brighteners in a Copper Plating Bath on Throwing Power and Thermal Reliability of Plated Through Holes , 2016 .

[19]  Zengling Wang,et al.  2-Mercaptopyridine as a new leveler for bottom-up filling of micro-vias in copper electroplating , 2016 .

[20]  Wensong Yu,et al.  3.38 Mhz operation of 1.2kV SiC MOSFET with integrated ultra-fast gate drive , 2015, 2015 IEEE 3rd Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[21]  Taro Hayashi,et al.  Role of Cuprous Ion in Copper Electrodeposition Acceleration , 2015 .

[22]  K. Nonaka,et al.  Analysis of Cu(I) Complexes in Copper Sulfate Electroplating Solution by Using Reaction Kinetics with a Chelate Reagent , 2014 .

[23]  M. Ramírez-Silva,et al.  Overpotential Nucleation and Growth of Copper onto Polycrystalline and Single Crystal Gold Electrodes , 2012, International Journal of Electrochemical Science.

[24]  M. Hopstaken,et al.  Leveler Effect and Oscillatory Behavior during Copper Electroplating , 2012 .

[25]  Huicong Liu,et al.  A variable hydrophobic surface improves corrosion resistance of electroplating copper coating , 2011 .

[26]  Wei-Ping Dow,et al.  Filling mechanism in microvia metallization by copper electroplating , 2008 .

[27]  H. Soliman,et al.  The use of rotating cylinder electrode to study the effect of 1,3-dihydroxypropane on the production of copper powder , 2006 .

[28]  J. Miao,et al.  Aspect-Ratio-Dependent Copper Electrodeposition Technique for Very High Aspect-Ratio Through-Hole Plating , 2006 .

[29]  A. Danilova,et al.  Kinetics of copper deposition on Pt(1 1 1) and Au(1 1 1) electrodes in solutions of different acidities , 2005 .

[30]  I. Tabaković,et al.  Effect of organic additives on structure, resistivity, and room-temperature recrystallization of electrodeposited Copper , 2004 .

[31]  Kazumasa Tanida,et al.  Au Bump Interconnection in 20 µm Pitch on 3D Chip Stacking Technology , 2003 .

[32]  Antony R Mileham,et al.  A finite element simulation of the electroplating process , 2002 .

[33]  H. Fricker Why Does Charge Concentrate on Points , 1989 .

[34]  I. Tomov,et al.  Influence of current density and temperature on the morphology and preferred orientation of electrodeposited copper coatings , 1972 .