Variable inductance multilayer inductor with MOSFET switch control

A variable monolithic inductor having a stacked spiral inductor connected with MOSFET switches is proposed and fabricated in a 0.18 /spl mu/m, one-poly-six-metal (1P6M) standard CMOS process. By controlling a voltage of the MOSFET switch, the proposed three-stacked inductor demonstrates a continuously variable inductance of from 8 to 23 nH at 2.4 GHz, and due to its stacked structure, it takes less than 50% of the chip area compared with conventional single layer inductors. With its compact size and variable inductance feature, the proposed variable inductor is a prospective key component for the multiband RF circuits such as electrically controllable matching circuits and wide tuning range voltage controlled oscillators (VCOs).

[1]  K. O. Kenneth,et al.  Demonstration of a switched resonator concept in a dual-band monolithic CMOS LC-tuned VCO , 2001, Proceedings of the IEEE 2001 Custom Integrated Circuits Conference (Cat. No.01CH37169).

[2]  Behzad Razavi,et al.  Stacked inductors and transformers in CMOS technology , 2001 .

[3]  Shen-Iuan Liu,et al.  Miniature 3-D inductors in standard CMOS process , 2002, IEEE J. Solid State Circuits.

[4]  Guo Lihui,et al.  High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz , 2002 .

[5]  Hyun-Kyu Yu,et al.  A merged gain-variable RF front-end design for a 2GHz WCDMA DCR application I , 2002, The 2002 45th Midwest Symposium on Circuits and Systems, 2002. MWSCAS-2002..