The VO2* defect in silicon

[1]  V. Voronkov,et al.  Nucleation of oxide precipitates in vacancy-containing silicon , 2002 .

[2]  V. Markevich,et al.  Defect engineering in Czochralski silicon by electron irradiation at different temperatures , 2002 .

[3]  H. Rücker,et al.  Interaction of vacancies with interstitial oxygen in silicon , 2001 .

[4]  S. Öberg,et al.  Oxygen and dioxygen centers in Si and Ge: Density-functional calculations , 2000 .

[5]  R. Nieminen,et al.  Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon , 1999 .

[6]  Londos,et al.  Precursor defect to the vacancy-dioxygen center in Si. , 1996, Physical review. B, Condensed matter.

[7]  V. Shumov,et al.  Some Properties of Oxygen-Related Radiation Induced Defects in Silicon and Germanium , 1996 .

[8]  S. Öberg,et al.  First Principles Investigation of Vacancy Oxygen Defects in Si , 1995 .

[9]  J. Lindström,et al.  Enhanced oxygen precipitation in electron irradiated silicon , 1992 .

[10]  Svensson Bg,et al.  Kinetic study of the 830- and 889-cm-1 infrared bands during annealing of irradiated silicon. , 1986 .

[11]  H. Stein Oxygen isotope effect on the 889 cm−1 band in silicon , 1986 .

[12]  J. Corbett,et al.  A study of the annealing of the 830 cm-1 IR band observed in electron-irradiated silicon , 1986 .

[13]  B. Svensson,et al.  Oxygen-Related Defects in Silicon , 1985 .

[14]  James W. Corbett,et al.  EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes , 1976 .

[15]  R. Newman,et al.  Electron irradiation damage in silicon containing carbon and diffused 18O , 1974 .

[16]  K. L. Brower STRUCTURE OF MULTIPLE-VACANCY (OXYGEN) CENTERS IN IRRADIATED SILICON. , 1971 .

[17]  G. D. Watkins,et al.  NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON , 1964 .