论文信息 - Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

Effect of the barrier composition on the polarization fields in near UV InGaN light emitting diodes

The electroluminescence from near ultraviolet (UV) light emitting diodes containing InGaN multiple quantum wells (MQWs) with GaN, AlGaN, and InAlGaN barriers was investigated. Based on band-structure calculations the observed wavelength shift in the peak emission with increasing injection current is attributed to the screening of the polarization fields and to band gap renormalization. InGaN MQWs with almost zero net polarization have been realized. No blueshift in the emission spectra of these devices was observed over the entire current range.

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