论文信息 - Deep level characterization of undoped CdTe crystals

Deep level characterization of undoped CdTe crystals

Cadmium telluride crystals have been prepared using innovative techniques for the synthesis and purification of the feed charge. The growth of low impurity content CdTe crystals was performed by both physical vapour transport and Bridgman techniques. It was found that the resistivity of the obtained crystals was strongly connected with their stoichiometry. The characterization of the main deep levels in semiconducting and semi-insulating materials, carried out by capacitance and current techniques, is reported.

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