A modified architecture for high-density MRAM

This paper modifies the magnetic RAM (MRAM) architecture by removing a current rectifier per cell without sacrificing performance. A read operation of stored data is maintained by introducing a simple concept of"virtual ground" of operational amplifier. The modified MRAM design offers a reduced element area and therefore achieves an over tenfold improvement in storage density. The proposed architecture has been proven operable by an engineering experiment

[1]  B. Bickford.  Nonvolatile memory requirements in a mobile computing environment , 1996, Proceedings of Nonvolatile Memory Technology Conference.

[2]  Mary Baker,et al.  Non-volatile memory for fast, reliable file systems , 1992, ASPLOS V.