Maskless lithography

The high and rising cost of photomasks (largely driven by writing times exceeding 24 h) is driving the exploration of maskless lithography for applications requiring throughput about 1cm^2/s which is about one tenth that of an optical projection exposure system. Achieving this throughput with charged particle lithography requires currents 10,000 times larger than those presently used and hence sets up the need for charged particle optics radically different from those being used today. Achieving this throughput with optical maskless lithography at the required minimum features sizes of 65nm and below is a serious engineering challenge for the spatial light modulator. Meeting 10% or even 1% of the throughput requirement might still result in mask writing and inspection technologies that would lead to significantly less expensive masks. Furthermore, relaxing the requirements on control of individual edge positions (i.e., a fixed-shape projector) would significantly ease the above challenges.

[1]  K. Valiev,et al.  The physics of submicron lithography , 1992 .

[2]  C. Oatley,et al.  The scanning electron microscope. , 1966, Science progress.

[3]  Henry I. Smith,et al.  Interferometric-spatial-phase imaging for six-axis mask control , 2003 .

[4]  Q. Cao,et al.  Modified Fresnel zone plates that produce sharp Gaussian focal spots. , 2003, Journal of the Optical Society of America. A, Optics, image science, and vision.

[5]  T. Fulton,et al.  New approach to electron beam lithography , 1983 .

[6]  Henry I. Smith,et al.  Method for reducing hyperbolic phase in interference lithography , 2001 .

[7]  Rajesh Menon,et al.  Fabrication of high-numerical-aperture phase zone plates with a single lithography exposure and no etching , 2003 .

[8]  William G. Oldham,et al.  Maskless extreme ultraviolet lithography , 1999 .

[9]  Jo Finders,et al.  Low-k1 imaging: how low can we go? , 2000, Other Conferences.

[10]  Dennis W. Prather,et al.  FORMULATION AND APPLICATION OF THE FINITE-DIFFERENCE TIME-DOMAIN METHOD FOR THE ANALYSIS OF AXIALLY SYMMETRIC DIFFRACTIVE OPTICAL ELEMENTS , 1999 .

[11]  Stephan Krämer,et al.  Scanning probe lithography using self-assembled monolayers. , 2003, Chemical reviews.

[12]  Masato Muraki,et al.  New concept for high-throughput multielectron beam direct write system , 2000 .

[13]  Tor Sandstrom,et al.  OML: optical maskless lithography for economic design prototyping and small-volume production , 2004, SPIE Advanced Lithography.

[14]  F. P. Stratton,et al.  30 nm resolution zero proximity lithography on high‐Z substrates , 1992 .

[15]  James D. Rockrohr,et al.  PREVAIL Alpha system: Status and design considerations , 2000 .

[16]  N. W. Parker,et al.  Electron optical column for a multicolumn, multibeam direct-write electron beam lithography system , 2000 .

[17]  Rajesh Menon,et al.  Lithographic patterning and confocal imaging with zone plates , 2000 .

[18]  Feng Zhang,et al.  Nanometer-level stitching in raster-scanning electron-beam lithography using spatial-phase locking , 2003 .

[19]  Rajesh Menon,et al.  The case for diffractive optics in maskless lithography , 2003 .

[20]  Ka-Ngo Leung,et al.  Plasma sources for electrons and ion beams , 1999 .

[21]  Mark L. Schattenburg,et al.  Large‐area achromatic interferometric lithography for 100 nm period gratings and grids , 1996 .

[22]  Robert Monteverde,et al.  Enabling high-data-rate imaging applications with Grating Light Valve technology , 2004, SPIE MOEMS-MEMS.

[23]  David M. Bloom,et al.  Grating Light Valve: revolutionizing display technology , 1997, Electronic Imaging.

[24]  Alan G. Michette,et al.  Optical Systems for Soft X Rays , 2011, Springer US.

[25]  Michael H. Lim,et al.  Optical waveguides with apodized sidewall gratings via spatial-phase-locked electron-beam lithography , 2002 .

[26]  S. Sze,et al.  Effects of H2 plasma treatment on low dielectric constant methylsilsesquioxane , 1999 .

[27]  Henry I. Smith A proposal for maskless, zone‐plate‐array nanolithography , 1996 .

[28]  R. L. Johnson,et al.  Sharper images by focusing soft X-rays with photon sieves , 2001, Nature.

[29]  T. R. Groves,et al.  Distributed, multiple variable shaped electron beam column for high throughput maskless lithography , 1998 .

[30]  Henry I. Smith,et al.  Optimization of a lithographic and ion beam etching process for nanostructuring magnetoresistive thin film stacks , 2000 .

[31]  R. Fabian Pease,et al.  Scaled measurements of global space-charge induced image blur in electron beam projection system , 2000 .

[32]  Mark L. Schattenburg,et al.  Nanometer-level repeatable metrology using the Nanoruler , 2003 .

[33]  Chad A Mirkin,et al.  The evolution of dip-pen nanolithography. , 2004, Angewandte Chemie.