论文信息 - Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study - 字舞流文

Ionic Glass–Gated 2D Material–Based Phototransistor: MoSe 2 over LaF 3 as Case Study

A. Ouerghi | J. Dayen | B. Doudin | E. Lhuillier | Clément Livache | C. Gréboval | T. Brulé | U. Noumbé