A 6–9-GHz programmable gain LNA with integrated balun in 90-nm CMOS

A low-noise amplifier (LNA) for operation over the common frequency range (6-9-GHz) allocated for Ultrawideband (UWB) communications both in USA, Europe, and Japan is presented. Implemented in a pure digital 90 nm CMOS technology, it features a 12.5 dB voltage gain over a 4.5-11-GHz 3-dB bandwidth, S11 < -8.2 dB, a noise figure of 3.9-5.1-dB, and P1dB > -6.8 dBm at a power consumption as low as 20.4 mW. The prototype includes an integrated balun for single ended to differential conversion and features a 4-step 12.7 dB programmable gain variation.

[1]  A. Bevilacqua,et al.  An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers , 2004, IEEE Journal of Solid-State Circuits.

[2]  Shen-Iuan Liu,et al.  A broadband noise-canceling CMOS LNA for 3.1-10.6-GHz UWB receiver , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[3]  M. Tiebout,et al.  A 0.13/spl mu/m CMOS LNA with Integrated Balun and Notch Filter for 3-to-5GHz UWB Receivers , 2007, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.

[4]  Shen-Iuan Liu,et al.  A Broadband Noise-Canceling CMOS LNA for 3.1–10.6-GHz UWB Receivers , 2007, IEEE Journal of Solid-State Circuits.

[5]  J.R. Long,et al.  A 1.2 V Reactive-Feedback 3.1–10.6 GHz Low-Noise Amplifier in 0.13 $\mu{\hbox {m}}$ CMOS , 2007, IEEE Journal of Solid-State Circuits.

[6]  Shen-Iuan Liu,et al.  An Ultra-Wide-Band 0.4–10-GHz LNA in 0.18-$\mu$m CMOS , 2007, IEEE Transactions on Circuits and Systems II: Express Briefs.

[7]  Yueh-Hua Yu,et al.  A 0.6-V Low Power UWB CMOS LNA , 2007, IEEE Microwave and Wireless Components Letters.

[8]  Jun-De Jin,et al.  A 3.1–10.6 GHz Ultra-Wideband CMOS Low Noise Amplifier With Current-Reused Technique , 2007, IEEE Microwave and Wireless Components Letters.