Charge collection in GaAs MESFETs and MODFETs
暂无分享,去创建一个
A. B. Campbell | Y. J. Chen | Dale McMorrow | S. Buchner | Alvin R. Knudson | V. Srinivas | S. Buchner | A. Campbell | K. Kang | D. Tu | A. Knudson | K. Kang | D. W. Tu | V. Srinivas | Y. J. Chen | D. McMorrow
[1] K. Mitsusada,et al. A bipolar mechanism for alpha-particle-induced soft errors in GaAs integrated circuits , 1989 .
[2] A. B. Campbell,et al. Charge collection from focussed picosecond laser pulses , 1988 .
[3] A. B. Campbell,et al. Fast charge collection in GaAs MESFETs , 1990 .
[4] H. B. Dietrich,et al. Reduction of Long-Term Transient Radiation Response in Ion Implanted GaAs FETs , 1982, IEEE Transactions on Nuclear Science.
[5] W. T. Anderson,et al. Long Term Transient Radiation Response of GaAs FETs Fabricated on an AlGaAs Buffer Layer , 1986, IEEE Transactions on Nuclear Science.
[6] R. Zuleeg,et al. Channel and Substrate Currents in GaAs FETS Due to Ionizing Radiation , 1983, IEEE Transactions on Nuclear Science.
[7] T.F. Carruthers,et al. Optically induced backgating transients in GaAs FET's , 1985, IEEE Electron Device Letters.
[8] M. Simons,et al. Transient Radiation Effects in AlGaAs/GaAs MODFETs , 1987, IEEE Transactions on Nuclear Science.
[9] L. D. Flesner. Transient Radiation Effects in GaAs Devices: Bulk Conduction and Channel Modulation Phenomena in D-MESFET, E-JFET, and N+-Si-N+ Structures , 1984, IEEE Transactions on Nuclear Science.
[10] Bimberg,et al. Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities. , 1985, Physical review. B, Condensed matter.
[11] M. Alles,et al. Model for CMOS/SOI single-event vulnerability , 1989 .
[12] L. Forbes,et al. Buried-channel GaAs MESFET's with immunity to ionizing optical radiation effects , 1987, IEEE Electron Device Letters.
[13] A. Johnston,et al. Single-event upset in GaAs E/D MESFET logic , 1990 .