Laser annealing of ion-implanted diamond

Laser-induced structure transformations in diamond single crystals implanted with light ions (H+, D+, He+) are studied by monitoring changes in the material density and optical transmission in dependence on UV laser pulsed irradiation parameters and ion implantation conditions. Characteristic features of the processes of laser annealing, graphitization, low-rate etching and explosive ablation of ion-implanted diamond layers are discussed.