Microwave phase retardation in saturated InGaAs photodetectors
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[1] Xiaoguang G. Zheng,et al. Partially depleted absorber waveguide photodiodes , 2004, The 17th Annual Meeting of the IEEELasers and Electro-Optics Society, 2004. LEOS 2004..
[2] S. Demiguel,et al. A comparison of front- and backside-illuminated high-saturation power partially depleted absorber photodetectors , 2004, IEEE Journal of Quantum Electronics.
[3] F. Effenberger,et al. Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector , 1996 .
[4] K. Williams,et al. Photodetector nonlinearity limitations on a high-dynamic range 3 GHz fiber optic link , 1998 .
[5] T. Ishibashi,et al. InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHz , 1998, IEEE Photonics Technology Letters.
[6] Chi-Kuang Sun,et al. Ultrafast transport dynamics of p-i-n photodetectors under high-power illumination , 1998, IEEE Photonics Technology Letters.
[7] M. Currie,et al. Optical quantization of microwave signals via distributed phase Modulation , 2005, Journal of Lightwave Technology.
[8] E. H. Bottcher,et al. Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors , 1992 .
[9] K. Williams,et al. Nonlinearities in p-i-n microwave photodetectors , 1996 .