A 1-V 2GHz VLSI CMOS low noise amplifier

A new LNA topology is presented in this paper. Compatible with VLSI technology the architecture is dedicated to the UMTS third generation mobile phone. Operating under 1 V supply voltage the circuit provides a more than 11 dB gain at 2.1 GHz. With a -11 dBm ICP1, the power consumption is lower than 4 mW, making the architecture well suited to very low power applications. The noise figure of 1.8 dB takes advantage of the inductive degeneration technique. The 0 dBm IIP3 fulfils the UMTS requirement whose the circuit is dedicated to.

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