A Highly Efficient 1.9-GHz Si High Power MOSFET

A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3 - 1.0 W output power at a 3 - 5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high power at a low supply voltage by using a 0.5-¿m gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance.