Preparation and optical properties of Ga1−xInxN thin films

By the use of the electron beam plasma technique, it has been found that the solid solutions of Ga1−xInxN can be synthesized over the entire composition region. From the optical measurements, the direct energy gap at 78 °K was determined to be 3.46 eV for GaN and 2.11 eV for InN. Also its composition dependence was found to deviate downward from linearity. From the infrared reflectivity measurement and the resultant K‐K dispersion analysis, the transverse optical frequencies for long‐wavelength phonons of GaN and InN were 563 and 478 cm−1, respectively. The optical phonons in this quasibinary system were concluded to exhibit a one‐mode–type behavior. The Brout sum rule was discussed for a large number of the diatomic crystals of ANB8−N type and its relation with respect to the reduced mass was derived as Σiω2i(k=0) =A μ−1.5. According to this relation, the longitudinal optical frequency of InN was deduced to be 694 cm−1. On the other hand, from the result of the annealing treatment for the solid‐solution ...

[1]  G. B. Stringfellow.  Calculation of regular solution interaction parameters in semiconductor solid solutions , 1973 .

[2]  M. Gratton,et al.  Phase diagram and lattice parameter data for the GaAsySb1−y system , 1973 .

[3]  Marc Ilegems,et al.  Infrared Lattice Vibrations and Free-Electron Dispersion in GaN , 1973 .

[4]  Kazuo Nakajima,et al.  Fundamental absorption edge in GaN, InN and their alloys , 1972 .

[5]  L. M. Foster,et al.  Thermodynamic Analysis of the III–V Alloy Semiconductor Phase Diagrams III . The Solidus Boundary in the Pseudobinary System , 1972 .

[6]  R. D. Cunningham,et al.  Variation of photoluminescence with carrier concentration in GaN , 1972 .

[7]  Marc Ilegems,et al.  Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers , 1971 .

[8]  Harada Hiroyuki,et al.  Lattice Vibration Spectra of ZnxCd1-xTe Alloys , 1971 .

[9]  Marc Ilegems,et al.  Donor-acceptor pair recombination in GaN , 1971 .

[10]  T. K. Bergstresser,et al.  Electronic Structures of Semiconductor Alloys , 1970 .

[11]  J. J. Tietjen,et al.  THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .

[12]  J. A. Van Vechten,et al.  Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies , 1969 .

[13]  J. C. Phillips.  Dielectric Definition of Electronegativity , 1968 .

[14]  I. Akasaki,et al.  Infrared lattice vibration of vapour-grown AlN , 1967 .

[15]  M. Straumanis,et al.  Thermal Expansion Coefficients and Lattice Parameters between 10° and 65°C in the System GaP ‐ GaAs , 1967 .

[16]  P. Gielisse,et al.  Lattice Infrared Spectra of Boron Nitride and Boron Monophosphide , 1967 .

[17]  S. S. Mitra,et al.  Trends in the Characteristic Phonon Frequencies of the NaCl‐, Diamond‐, Zinc‐Blende‐, and Wurtzite‐Type Crystals , 1964 .

[18]  S. S. Mitra,et al.  Optically Active Phonon Processes in CdS and ZnS , 1964 .

[19]  H. B. Rosenstock.  Sum Rule for Lattice Vibrations; Application to Forces in Diamond Structures , 1963 .

[20]  K. Nakajima,et al.  Calculation of III-V Quasi-Binary Phase Diagrams and Theoretical Analysis of the Excess Free Energies for their Solid Solutions , 1972 .

[21]  R. Brout.  Sum Rule for Lattice Vibrations in Ionic Crystals , 1959 .