论文信息 - Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (∼95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects. The photo-EPR results obtained for the positively charged carbon vacancy (VC+) can be explained by a deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band.

E. Janzén | N. T. Son | B. Magnusson | E. Janzén

[1] V. Konovalov,et al. The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance , 2002 .

[2] E. Janzén,et al. Silicon antisite in 4H SiC. , 2001, Physical review letters.

[3] R. Nieminen,et al. Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC , 2001 .

[4] E. Janzén,et al. Carbon vacancy-related defect in 4H and 6H SiC , 2001 .

[5] E. Janzén,et al. Intrinsic Defects in Silicon Carbide Polytypes , 2001 .

[6] Bo Monemar,et al. Carbon-vacancy related defects in 4H- and 6H-SiC , 1999 .

[7] Friedhelm Bechstedt,et al. Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure , 1999 .

[8] E. Condon,et al. Nuclear Motions Associated with Electron Transitions in Diatomic Molecules , 1928 .

[9] James Franck,et al. Elementary processes of photochemical reactions , 1926 .