论文信息 - Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency

An excellent cutoff frequency (f/sub t/) as high as 400 GHz was successfully realized in 45-nm-gate pseudomorphic InGaAs/InAlAs high electron mobility transistors (HEMTs). An additional vertical gate-recess suppressed short-channel effects, while keeping good pinchoff characteristics. Gate length (L/sub g/) dependence of electron transit time (/spl tau//sub transit/) implied an increased saturation velocity (/spl upsi//sub s/) of 3.6/spl times/10/sup 7/ cm/s in the developed pseudomorphic HEMTs. This f/sub t/ is the highest value ever reported for any transistors to date.

[1] Toshiaki Matsui,et al. Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency , 2001 .

[2] April Brown,et al. 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors , 1992 .

[3] Y. Yamashita,et al. High fT 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates , 2000 .

[4] Tetsuya Suemitsu,et al. Improved Recessed-Gate Structure for Sub-0.1-µm-Gate InP-Based High Electron Mobility Transistors , 1998 .

[5] Y. Yamashita,et al. High f/sub T/ 50-nm-gate lattice-matched InAlAs/InGaAs HEMTs , 2000, Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).

[6] Tetsuya Suemitsu,et al. 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency , 1999 .

[7] M. Higashiwaki,et al. Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency , 2001, IEEE Electron Device Letters.

[8] Toshiaki Matsui,et al. Ultra-short T-shaped gate fabrication technique for InP based HEMTs with high ft (> 300 GHz) and their MMIC applications , 2000 .

[9] T. Enoki,et al. 0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects , 1994 .