Hole path concept for low switching loss and low EMI noise with high IE-effect

This paper presents the “Hole Path Concept” in trench gate IGBTs in order to have extended performance in faster switching with balance low switching loss and low ElectroMagnetic Interference (EMI) noise. The hole path IGET which is utilized narrow hole extraction regions in floating p-region can realize a better turn-on di/dt controllability with high IE effect.

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