Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas

A fundamental oscillation of up to 915 GHz was observed at room temperature in small-area InGaAs/AlAs resonant tunneling diodes (RTDs) with planar slot antennas. The dependence of the oscillation frequency on the RTD mesa area was also shown. Although the output power was small (a few tens of nanowatts) in this study owing to the relatively low available current density (difference in current density between the peak and the valley: ~3 mA/µm2) and the small mesa area (~0.63 µm2), it was expected that the output power can be increased by a high available current density.