Semiconductor waveguide optical switches and modulators
暂无分享,去创建一个
[1] R.H. Yan,et al. Extremely low-voltage Fabry-Perot reflection modulators , 1990, IEEE Photonics Technology Letters.
[2] Bernhard Schaffer. Switching in the Broad-Band ISDN , 1986, IEEE J. Sel. Areas Commun..
[3] Masahiro Asada,et al. Theory of refractive index variation in quantum well structure and related intersectional optical switch , 1988 .
[4] Hiroyuki Sakaki,et al. Carrier Concentration Dependent Absorption Spectra of Modulation Doped n-AlGaAs/GaAs Quantum Wells and Performance Analysis of Optical Modulators and Switches Using Carrier Induced Bleaching (CIB) and Refractive Index Change (CIRIC) , 1987 .
[5] B. Tell,et al. Compact low-voltage InGaAs/InAlAs multiple quantum well waveguide interferometers , 1990 .
[6] Ikuo Mito,et al. First 8*8 semiconductor optical matrix switches using GaAs/AlGaAs electro-optic guided-wave directional couplers , 1992 .
[7] David A. B. Miller,et al. Electroabsorption in GaAs/AlGaAs coupled quantum well waveguides , 1987 .
[8] W. Wiegmann,et al. Structure of AlAs‐GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy , 1984 .
[9] S. Akiba,et al. Effect of hole pile-up at heterointerface on modulation voltage in GaInAsP electroabsorption modulators , 1989 .
[10] C. Burrus,et al. The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulation , 1985 .
[11] T. Fukui,et al. (AlAs)0.5(GaAs)0.5 fractional‐layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition , 1987 .
[12] S. Akiba,et al. High-speed characteristics at high input optical power of GaInAsP electroabsorption modulators , 1988 .
[13] Bumman Kim,et al. Optical channel waveguide switch and coupler using total internal reflection , 1978, IEEE Journal of Quantum Electronics.
[14] K. Woodbridge,et al. Experimental study of switching in a p-i(MQW)-n vertical coupler , 1989, IEEE Photonics Technology Letters.
[15] Y. Suematsu,et al. Integrated optics approach for advanced semiconductor lasers , 1987, Proceedings of the IEEE.
[16] Shigehisa Arai,et al. Dynamic single-mode semiconductor lasers with a distributed reflector , 1983 .
[17] I. Bennion,et al. Low-voltage, 50 Omega , GaAs/AlGaAs travelling-wave modulator with bandwidth exceeding 25 GHz , 1989 .
[18] K. Sato,et al. Strained InGaAsP multiquantum wells for optical electroabsorption waveguide modulators , 1992 .
[19] J. E. Zucker,et al. Low-voltage phase modulation in GaAs/AlGaAs quantum well optical waveguides , 1988 .
[20] K. G. Ravikumar,et al. Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch , 1992 .
[21] Tatsuya Kimura. Fiber Optic Transmission Systems-Status and Trends in Japan , 1986, IEEE J. Sel. Areas Commun..
[22] T. Kodama,et al. Binding Energies of Wannier Excitons in Ga1-xAlxAs Quantum-Well Wires , 1985 .
[23] W. Wiegmann,et al. High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure , 1983, 1983 International Electron Devices Meeting.
[24] High-speed and low-drive-voltage monolithic multiple quantum-well modulator/DFB laser light source , 1992, IEEE Photonics Technology Letters.
[25] Ikuo Mito,et al. DFB-LD/modulator integrated light source by bandgap energy controlled selective MOVPE , 1992 .
[26] S. Akiba,et al. Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation , 1986 .
[27] T. Kikugawa,et al. Switching operation in OMVPE grown GaInAs/InP MQW intersectional optical switch structures , 1989, IEEE Photonics Technology Letters.
[28] N. Edagawa,et al. 2.4 Gbit/s 100 km penalty-free conventional fibre transmission experiments using GaInAsP electroabsorption modulator , 1989 .
[29] Shigeyuki Akiba,et al. High-speed electroabsorption modulator with strip-loaded InGaAsP planar waveguide , 1986, Topical Meeting on Integrated and Guided-Wave Optics.
[30] Y. Yoshikuni,et al. Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators , 1986 .
[31] Hiroshi Ishikawa,et al. Chirp behaviour of high-speed GaInAsP/InP optical intensity modulator , 1988 .
[32] Optimization of optical waveguide modulators based on Wannier-Stark localization: an experimental study , 1992 .
[33] L. Coldren,et al. Electrically tunable Fabry–Perot mirror using multiple quantum well index modulation , 1988 .
[34] J. P. Harbison,et al. Low‐loss GaAs/AlGaAs waveguide phase modulator using a W‐shaped index profile , 1988 .
[35] A. Alping,et al. Miniature optical waveguide modulator in AlGaAs/GaAs using carrier depletion , 1986 .
[36] D. Miller,et al. Multiple quantum well reflection modulator , 1987 .
[37] Uziel Koren,et al. InGaAs/InP multiple quantum well waveguide phase modulator , 1987 .
[38] D. Miller,et al. GaAs-AlGaAs multiquantum well reflection modulators grown on GaAs and silicon substrates , 1989, IEEE Photonics Technology Letters.
[39] K. G. Ravikumar,et al. Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch , 1991 .
[40] M. Kohtoku,et al. Switching operation in a GaInAs-InP MQW integrated-twin-guide (ITG) optical switch , 1991, IEEE Photonics Technology Letters.
[41] T. Chong,et al. Polarisation dependence of field-induced refractive index variation in strained and unstrained quantum well structures , 1990 .
[42] Shigehisa Arai,et al. Switching operation in intersectional type field effect MQW optical switch , 1988 .
[43] Wood,et al. Electric field dependence of optical absorption near the band gap of quantum-well structures. , 1985, Physical review. B, Condensed matter.
[44] G. Muller,et al. Low current plasma effect optical switch on InP , 1990 .
[45] R. Schmidt,et al. Switched directional couplers with alternating Δ Β , 1976 .
[46] R. Alferness. Guided-wave devices for optical communication , 1981 .
[47] C. A. Burrus,et al. Electro‐optic phase modulation in GaAs/AlGaAs quantum well waveguides , 1988 .
[48] Osamu Mitomi,et al. High‐speed InGaAs/InAlAs multiple‐quantum‐well optical modulator , 1990 .
[49] A. Suzuki,et al. 5:1 on‐off contrast InGaAs/InP multiple quantum well Fabry–Perot étalon modulator , 1989 .
[50] B. Tell,et al. InGaAs-InAlAs quantum well intersecting waveguide switch operating at 1.55 mu m , 1990, IEEE Photonics Technology Letters.
[51] Miller,et al. Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect. , 1986, Physical review. B, Condensed matter.
[52] I. Kaminow,et al. Linear Electrooptical Materials , 1974 .
[53] L. Coldren,et al. Wide-bandwidth, high-efficiency reflection modulators using an unbalanced Fabry-Perot structure , 1989 .
[54] Thomas H. Wood,et al. High-speed 2 × 2 electrically driven spatial light modulator made with GaAs/AlGaAs multiple quantum wells(MQWs) , 1987 .
[55] L. Coldren,et al. Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells , 1988 .
[56] David A. B. Miller,et al. High-frequency InGaAs/InP multiple-quantum-well buried-mesa electroabsorption optical modulator , 1987 .
[57] Masahiro Asada,et al. Field Induced Refractive Index Variation in Quantum Box Structure for Intersectional Optical Switch , 1989 .
[58] T. Kurokawa,et al. Novel photonic switch arrays consisting of vertically integrated multiple-quantum-well reflection modulators and phototransistors: excitation absorptive reflection switch , 1991, IEEE Photonics Technology Letters.
[59] Hiroshi Okamoto,et al. Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption , 1985 .
[60] Y. Yoshikuni,et al. Highly efficient InGaAs/InAIAs MQW waveguide phase shifter , 1987 .
[61] Characteristics of 4×4 photonic switch array with gain and high contrast , 1991 .
[62] L. Coldren,et al. A field induced guide-antiguide modulator of GaAs-AlGaAs , 1991, IEEE Photonics Technology Letters.
[63] C. C. Button,et al. Low-voltage multiple quantum well reflection modulator with on:off ratio >100:1 , 1989 .
[64] Y. Yoshikuni,et al. High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells , 1985 .
[65] H. Ishikawa,et al. High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers , 1987 .
[66] T. Aizawa,et al. Low-drive voltage intersectional waveguide optical switch using GaInAs/InP MQW structure , 1992, IEEE Photonics Technology Letters.
[67] M. S. Whalen,et al. Variation of frequency chirp with wavelength in an InGaAsP/InP multiple-quantum-well (MQW) waveguide electroabsorption modulator , 1991, IEEE Photonics Technology Letters.
[68] Uziel Koren,et al. Compact directional coupler switches using quantum well electrorefraction , 1989 .
[69] L. Coldren,et al. Analysis of depletion edge translation lightwave modulators , 1988 .
[70] A. R. Adams,et al. Band-structure engineering for low-threshold high-efficiency semiconductor lasers , 1986 .
[71] F. Koyama,et al. Analysis of dynamic spectral width of dynamic-single-mode (DSM) lasers and related transmission bandwidth of single-mode fibers , 1985, IEEE Journal of Quantum Electronics.
[72] K.-K. Law,et al. Low-voltage superlattice asymmetric Fabry-Perot reflection modulator , 1991, IEEE Photonics Technology Letters.
[73] Rodney S. Tucker,et al. High-speed waveguide optical modulator made from GaSb/AlGaSb multiple quantum wells (MQWs) , 1987 .
[74] Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range , 1989 .
[75] I. Suemune,et al. Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room Temperature , 1986 .
[76] H. Morkoç,et al. AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates , 1988 .
[77] Shigehisa Arai,et al. 2V drive-voltage switching operation in 1.55 mu m GaInAs/InP MQW intersectional waveguide optical switch , 1992 .
[78] Hisaharu Yanagawa,et al. Polarization- and wavelength-insensitive guided-wave optical switch with semiconductor Y junction , 1990 .
[79] Hirohisa Sano,et al. Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth , 1991 .
[80] Osamu Mikami,et al. Modified balanced-bridge switch with two straight waveguides , 1979 .
[81] Kunio Tada,et al. GaAs traveling‐wave directional coupler optical modulator/switch , 1990 .
[82] M. Erman,et al. Very low power nonlinear directional coupling in a p-i (MQW)-n vertical coupler using an electrooptic feedback , 1990, IEEE Photonics Technology Letters.
[83] M. Ikeda,et al. Laser diode switch , 1981 .
[84] Masamichi Fujiwara,et al. Monolithically integrated optical gate 2 × 2 matrix switch using GaAs/AlGaAs multiple quantum well structure , 1987 .
[86] Makoto Suzuki,et al. High-speed (10 Gbit/s) and low-drive-voltage (1 V peak to peak) InGaAs/InGaAsP MQW electroabsorption-modulator integrated DFB laser with semi-insulating buried heterostructure , 1992 .
[87] U. Koren,et al. Miniature Mach-Zehnder InGaAsP quantum well waveguide interferometers for 1.3 mu m , 1990, IEEE Photonics Technology Letters.
[88] K. Tada,et al. Vertical multiple-quantum-well directional-coupler switch with low switching voltage , 1992, IEEE Photonics Technology Letters.
[89] Yong-Hee Lee,et al. Electro-Dispersive Multiple Quantum Well Modulator , 1988 .
[90] High performance QCSE phase modulator for the 1.5–1.55 μm fibre band , 1990 .
[91] H. Morkoç,et al. GaInAs/GaAs multiple quantum well reflection modulators , 1988 .
[92] Shu Yamamoto,et al. 5-Gb/s performance of integrated light source consisting of lambda /4-shifted DFB laser and EA modulator with SI InP BH structure , 1990 .
[93] K. Tharmalingam. Optical Absorption in the Presence of a Uniform Field , 1963 .
[94] Koichi Wakita,et al. High-speed InGaAlAs/InAlAs multiple quantum well optical modulators , 1990 .
[95] K. Ishida,et al. Carrier-injection type optical S/sup 3/ switch with traveling-wave amplifier , 1990, IEEE Photonics Technology Letters.
[96] Uziel Koren,et al. Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator , 1987 .
[97] Shigehisa Arai,et al. Field‐induced refractive index variation spectrum in a GaInAs/InP quantum wire structure , 1991 .
[98] M. Wegener,et al. Optical waveguide intensity modulators based on a tunable electron density multiple quantum well structure , 1990 .
[99] K. Uomi,et al. High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique , 1992, IEEE Photonics Technology Letters.
[100] L. Coldren,et al. Wavelength dependence of high-performance AlGaAs/GaAs waveguide phase modulators , 1987 .
[101] Joseph H. Abeles,et al. Novel optoelectronic single quantum well devices based on electron bleaching of exciton absorption , 1987 .
[102] W. Wiegmann,et al. 131 ps optical modulation in semiconductor multiple quantum wells (MQW's) , 1985, IEEE Journal of Quantum Electronics.
[103] Proposal of Bipolar Transistor Carrier-Injected Optical Modulators and Switches , 1986 .
[104] I. Kotaka,et al. High-speed InGaAlAs/InAlAs multiple quantum well electrooptic phase modulators with bandwidth in excess of 20 GHz , 1992, IEEE Photonics Technology Letters.
[105] Hiroaki Inoue,et al. An 8 mm length nonblocking 4×4 optical switch array , 1988, IEEE J. Sel. Areas Commun..
[106] Kambiz Alavi,et al. Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures , 1989 .
[107] N. Dagli,et al. Depletion edge translation waveguide crossing optical switch , 1989, IEEE Photonics Technology Letters.
[108] David A. B. Miller,et al. Electroabsorption of highly confined systems: Theory of the quantum‐confined Franz–Keldysh effect in semiconductor quantum wires and dots , 1988 .
[109] Rod C. Alferness. Waveguide electrooptic switch arrays , 1988, IEEE J. Sel. Areas Commun..
[110] A novel integrated-twin-guide (ITG) optical switch with a built-in TIR region , 1992, IEEE Photonics Technology Letters.
[111] T. Chang,et al. High-contrast electron-transfer GaAs-AlGaAs multiple-quantum-well waveguide modulator , 1991, IEEE Photonics Technology Letters.
[112] Masahiro Asada,et al. Electric-field-induced refractive index variation in quantum-well structure , 1985 .
[113] Bastard,et al. Electric-field-induced localization and oscillatory electro-optical properties of semiconductor superlattices. , 1988, Physical review letters.
[114] K. Muto,et al. Mirror-type optical branch and switch. , 1978, Applied optics.
[115] Kenya Nakai,et al. InGaAsP/InP optical switches embedded with semi-insulating InP current blocking layers , 1988, IEEE J. Sel. Areas Commun..
[116] Rajaram Bhat,et al. Single quantum wire semiconductor lasers , 1989 .
[117] H. Takeuchi,et al. GaAs/AlGaAs directional coupler switch with submillimetre device length , 1986 .
[118] Kiichi Hamamoto,et al. 4*4 GaAs/AlGaAs optical matrix switches with uniform device characteristics using alternating Delta beta electrooptic guided-wave directional couplers , 1991 .
[119] Shigehisa Arai,et al. Analysis of semiconductor intersectional waveguide optical switch-modulator , 1990 .
[120] Michael Andreja Fisher,et al. 1 × 2 lossless semiconductor optical switch , 1991 .
[121] J. M. Kuo,et al. Electroabsorption and refraction by electron transfer in asymmetric modulation‐doped multiple quantum well structures , 1989 .
[122] M. Chmielowski,et al. Quantum well vertical light modulator , 1989, IEEE Photonics Technology Letters.
[123] Jérôme Faist,et al. Low-drive-voltage, low-loss AlGaAs/GaAs 2*2 switch , 1988 .
[124] Gerard Mourou,et al. 100 GHz traveling‐wave electro‐optic phase modulator , 1989 .
[125] S. Sheem,et al. Total internal reflection integrated-optics switch: a theoretical evaluation. , 1978, Applied optics.
[126] L. Coldren,et al. Electroabsorptive Fabry-Perot reflection modulators with asymmetric mirrors , 1989, IEEE Photonics Technology Letters.
[127] C. Henry. Theory of the linewidth of semiconductor lasers , 1982 .
[128] K. Tada,et al. Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum Well , 1989 .
[129] R. Alferness. Waveguide Electrooptic Modulators , 1982 .
[130] Seigo Tarucha,et al. Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure , 1986 .
[131] Lars Thylén,et al. Monolithically integrated 2*2 InGaAsP/InP laser amplifier gate switch arrays , 1992 .
[132] U. Koren,et al. Zero‐loss quantum well waveguide Mach–Zehnder modulator at 1.55 μm , 1992 .
[133] Uziel Koren,et al. Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch , 1989 .
[134] L. Coldren,et al. Design of optimized high‐speed depletion‐edge‐translation optical waveguide modulators in III‐V semiconductors , 1987 .
[135] K. Wakita,et al. Long-wavelength waveguide multiple-quantum-well (MQW) optical modulator with 30:1 on/off ratio , 1986 .
[136] Osamu Mikami,et al. InGaAs/InAlAs MULTIPLE QUANTUM WELL OPTICAL MODULATORS , 1988 .
[137] F. Koyama,et al. Frequency chirping in external modulators , 1988 .
[138] David A. B. Miller,et al. 100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio , 1985 .
[139] J. Cunningham,et al. Monolithic integration of normally‐on and normally‐off asymmetric Fabry–Perot modulators by selective antireflection coating , 1992 .
[140] K. Kasaya,et al. Low-switching-voltage InGaAsP/InP waveguide interferometric modulator for integrated optics , 1989, IEEE Photonics Technology Letters.
[141] Kenichi Kasahara,et al. Double heterostructure optoelectronic switch as a dynamic memory with low-power consumption , 1988 .
[142] Kenji Kawano,et al. High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulators , 1991 .
[143] E. A. J. Marcatili,et al. Dielectric rectangular waveguide and directional coupler for integrated optics , 1969 .
[144] S. Akiba,et al. Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulators , 1988 .
[145] O. Mitomi,et al. Observation of low-chirp modulation in InGaAs-InAlAs multiple-quantum-well optical modulators under 30 GHz , 1991, IEEE Photonics Technology Letters.
[146] J. Callaway. Optical Absorption in an Electric Field , 1963 .
[147] Koji Ishida,et al. InGaAsP/InP optical switches using carrier induced refractive index change , 1987 .
[148] Frank Stern,et al. Dispersion of the Index of Refraction Near the Absorption Edge of Semiconductors , 1964 .
[149] S. Tsuji,et al. Optical amplification by monolithically integrated distributed-feedback lasers , 1987 .
[150] V. Sundaram,et al. Highly efficient separate-confinement PpinN GaAs/AlGaAs waveguide phase modulator , 1989 .
[151] Larry A. Coldren,et al. Use of tilted-superlattices for quantum-well-wire lasers , 1989 .
[152] Kunio Tada,et al. A new light modulator using perturbation of synchronism between two coupled guides , 1974 .
[153] D. Miller,et al. Optical reading of field‐effect transistors by phase‐space absorption quenching in a single InGaAs quantum well conducting channel , 1987 .
[154] M.A.Z. Rejman-Greene,et al. Planar 3*3 array of GaInAs/InP MQW surface optical modulators grown by gas-source MBE , 1988 .