Electrical and Optical Properties of Laser-Induced Structural Modifications in PbSe Films

PbSe chalcogenide films are widely used as photosensitive elements in gas analysis devices. High absorption in the IR spectrum region and low electrical resistance are important characteristics. Continuous laser radiation exposure of films in the near UV range makes it possible to achieve the desired characteristics, replacing oven heat treatment in the technological process. In the considered laser technology, PbSe films are subjected to photothermal action by a spot of focused radiation in the progressive scanning mode. In this work, changes in the optical and electrical film properties were studied, and the mechanism of structural laser modification was also considered.

[1]  T. Itina,et al.  Real-Time Analysis of Laser-Induced Plasmon Tuning in Nanoporous Glass Composite , 2020, Nanomaterials.

[2]  Samiran Ganguly,et al.  Embedded surface plasmon resonant disc arrays for improved MWIR sensitivity and increased operating temperature of PbSe photoconductive detectors , 2019, NanoScience + Engineering.

[3]  V. Fuertes,et al.  Hierarchical micro-nanostructured albite-based glass-ceramic for high dielectric strength insulators , 2018, Journal of the European Ceramic Society.

[4]  W. Luo,et al.  Evidences of sensitization mechanism for PbSe thin films photoconductor , 2018 .

[5]  H. Jain,et al.  Coexistence of photodarkening and photobleaching in Ge-Sb-Se thin films , 2017 .

[6]  Andrew T. Anderson,et al.  Laser powder-bed fusion additive manufacturing: Physics of complex melt flow and formation mechanisms of pores, spatter, and denudation zones , 2015, 1512.02593.

[7]  P. R. Larson,et al.  Responsivity enhancement of mid-infrared PbSe detectors using CaF2 nano-structured antireflective coatings , 2014 .

[8]  Lihua Zhao,et al.  Recent development on the uncooled mid-infrared PbSe detectors with high detectivity , 2013, Photonics West - Optoelectronic Materials and Devices.

[9]  Zhisheng Shi,et al.  Study of sensitization process on mid-infrared uncooled PbSe photoconductive detectors leads to high detectivity , 2013 .

[10]  L. Chernyak,et al.  Infrared detectors based on semiconductor p-n junction of PbSe , 2012 .

[11]  R. Sivakumar,et al.  Investigation on structural, optical, morphological and electrical properties of thermally deposited lead selenide (PbSe) nanocrystalline thin films , 2012, Journal of Crystal Growth.

[12]  Antoni Rogalski,et al.  History of infrared detectors , 2012 .

[13]  P. Yang,et al.  Thermoelectric properties of p-type PbSe nanowires , 2009 .

[14]  Peidong Yang,et al.  Field-effect modulation of Seebeck coefficient in single PbSe nanowires. , 2009, Nano letters.

[15]  Bin Xiao,et al.  Marangoni and Buoyancy Effects on Direct Metal Laser Sintering with a Moving Laser Beam , 2007 .

[16]  H. Mohseni,et al.  Emerging technologies for high performance infrared detectors , 2017 .