Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system
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[1] R. T. Tung. Oxide mediated epitaxy of CoSi2 on silicon , 1996 .
[2] H. Ryssel,et al. Ion-beam mixed ultra-thin cobalt suicide (CoSi2) films by cobalt sputtering and rapid thermal annealing , 1995 .
[3] Z. Lu,et al. Electronic structure of FeSi , 1995, mtrl-th/9505004.
[4] E. Majková,et al. Characterization of W/Si multilayers by ultrasoft x-ray emission spectroscopy , 1995 .
[5] C. Dehm,et al. Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation , 1993 .
[6] E. Kurmaev,et al. Analysis of the depth profile of Fe-Si buried layers in Fe + -implanted Si wafer by soft X-ray emission spectroscopy , 1993 .
[7] Simůnek,et al. Electronic structure of amorphous SiOx:H alloy films studied by x-ray emission spectroscopy: Si K, Si L, and O K emission bands. , 1993, Physical review. B, Condensed matter.
[8] K. Maex,et al. Comparison between CoSi2 and TiSi2 as dopant source for shallow silicided junction formation , 1989 .
[9] E. Kurmaev,et al. X-ray emission spectra and electronic structure of amorphous silicon , 1985 .