论文信息 - Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties

Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties

The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known two-shaping elements (TSE) method was used to produce the material. Pilot tests show that this composite material can be used for production of solar cells. The structure of silicon grains is elongated relative to the growth direction, the dislocation density in grains is of about (5÷8) ×104 cm-2, the average lifetime of minority carriers is 4÷6 µs.

V. Kveder | V. Orlov | S. K. Brantov | N. Kuznetzov

[1] E. A. Steinman,et al. Room-temperature silicon light-emitting diodes based on dislocation luminescence , 2004 .

[2] L. J. Geerligs,et al. Casting Technologies for Solar Silicon Wafers: Block Casting and Ribbon-Growth-on-Substrate , 2003 .

[3] W. Schröter,et al. Electrical Activity of Dislocations in Si Decorated by Ni , 2001 .

[4] W. Schröter,et al. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior , 2001 .

[5] I. Périchaud,et al. EXTERNAL GETTERING BY ALUMINUM-SILICON ALLOYING OBSERVED FROM CARRIER RECOMBINATION AT DISLOCATIONS IN FLOAT ZONE SILICON WAFERS , 1997 .

[6] I. Périchaud,et al. Influence of phosphorus diffusion on the recombination strength of dislocations in float zone silicon wafers , 1996 .

[7] B. Epelbaum,et al. Development of the Two-Shaping-Elements (TSE) method for silicon sheet growth , 1990 .

[8] V. A. Tatarchenko,et al. Shaped crystal growth using two shaping elements (TSE): Physical features of the method and its application to silicon/carbon composite materials production , 1987 .