Papers Thermal Behavior of Visible AlGaInP-GaInP Ridge Laser Diodes

The thermal behavior of visible AIGaInP-GaInP ridge laser diodes is investigated numerically and experimen- tally. It is shown that various parameters critically influence the thermal resistance R of such devices. R is inversely propor- tional to the thermal conductivity of the heatsink. A substantial improvement in R-quite larger than in the AlGaAs system-is achieved for junction-side-down mounting compared to junc- tion-side-up. R depends strongly on the width w of the ridge and this effect is different for junction-side-up or down mount- ing. In the first case, R - log (w) and in the second, R - l/w. The thickness of the soldering material is a sensitive parameter which may increase the value of R by up to 15 K/W. On the other hand, for junction-side-up mounted devices, the top me- tallization layer has a very favorable effect: a 1 pm thick gold layer reduces R by 30%. The dynamics of thermal phenomena is also studied. It is shown that when a laser is switched on the steady state is reached in the ms time range. Finally, our ex- perimental results show a very good agreement with our nu- merical data.

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