Growth of device quality GaAs by chemical beam epitaxy
暂无分享,去创建一个
[1] J. Cunningham,et al. Gallium- and arsenic-induced oscillations of intensity of reflection high-energy electron diffraction in the growth of (001) GaAs by chemical beam epitaxy , 1987 .
[2] M. Mashita,et al. Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and Arsine , 1986 .
[3] M. Panish,et al. A mass spectrometric study of AsH3 and PH3 gas sources for molecular beam epitaxy , 1986 .
[4] H. Lüth,et al. A comparative study of Ga(CH3)3 and Ga(C2H5)3 in the mombe of GaAs , 1986 .
[5] Won-Tien Tsang,et al. Elimination of oval defects in epilayers by using chemical beam epitaxy , 1985 .
[6] W. Tsang. Selective area growth of GaAs and In0.53Ga0.47As epilayer structures by chemical beam epitaxy using silicon shadow masks: A demonstration of the beam nature , 1985 .
[7] W. Tsang. Chemical beam epitaxy of InP and GaAs , 1984 .
[8] M. Konagai,et al. Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source , 1984 .
[9] W. Pletschen,et al. Metalorganic CVD of GaAs in a molecular beam system , 1981 .