Fully optical and electrically interfaced, monolithic 1 × 12 array of In0.53Ga0.47As/InP p-i-n photodiodes

We describe the fabrication of monolithically integrated, 1 × 12 arrays of In0.53Ga0.47As/InP photodiodes. These devices are fully electrically and optically interfaced, and are useful for fiber-optic system applications. The dark current of each diode at -5 V is 80% at 1.3 µm for the diodes. These are, to our knowledge, the first such devices made for use in long-wavelength, optical fiber systems.