Electrically programmable resistance cross point memory

The resistive cross point memory device and its manufacturing method and use are provided. The memory device includes an active layer of perovskite material interposed between the upper electrode and the lower electrode. The bit located in the region of the active layer in the upper electrode and the lower electrode intersection is response to the application of one or more voltage pulse have a resistance which can be changed within the range of values. Voltage pulses, increasing the resistance of the bit region, reduce the resistance of the bit region, or can be used to determine the resistance of the bit region. The memory circuit is provided to assist in the programming and read out in the bit areas.