Transparent Conducting Oxides Based on the Spinel Structure

The structural characteristics of spinel (from both theoretical and experimental viewpoints) that are advantageous for producing transparent conducting oxide (TCO) materials are considered. A working hypothesis is presented for finding new TCO materials with spinel structure. Results of tight-binding energy-band calculations reveal the formation of extended conduction bands in selected TCOs. This is a necessary criterion for n-type TCOs containing cations with d10s0 electronic configuration. Discovery of some transparent conducting spinels, namely MgIn2O4, CdGa2O4, and ZnGa2O4, provides experimental confirmation for the formation of extended conduction bands. Li+-, He+-, and H+-ion implantations into MgIn2O4 films have been performed to explore a new technique to generate electron carriers. Carrier generation in implanted MgIn2O4 films has been verified from electrical conductivity and optical absorption measurements. Implanted Li+ ions have been observed to occupy vacant tetrahedral cation interstices in the spinel lattice. Each Li+ ion releases an electron to the conduction band upon occupying this tetrahedral vacancy. Observations suggest that the ion implantation technique is effective and feasible for carrier generation in TCO materials.

[1]  H. Hosono,et al.  SrCu2O2: A p-type conductive oxide with wide band gap , 1998 .

[2]  Hideo Hosono,et al.  P-type electrical conduction in transparent thin films of CuAlO2 , 1997, Nature.

[3]  H. Hosono,et al.  New amorphous semiconductor: 2CdO⋅PbOx , 1996 .

[4]  H. Hosono,et al.  Conversion of insulating thin films of MgIn2O4 into transparent conductors by ion implantation , 1995 .

[5]  T. Minami,et al.  New transparent conducting MgIn2O4Zn2In2O5 thin films prepared by magnetron sputtering , 1995 .

[6]  Megumi Takeuchi,et al.  New Transparent Conductive Oxides with YbFe2O4 Structure , 1995 .

[7]  H. Hosono,et al.  Amorphous transparent electroconductor 2CdO⋅GeO2: Conversion of amorphous insulating cadmium germanate by ion implantation , 1995 .

[8]  Theo Siegrist,et al.  Zinc‐indium‐oxide: A high conductivity transparent conducting oxide , 1995 .

[9]  H. Hosono,et al.  Preparation of Electroconductive and Transparent Thin Films of AgSbO3 , 1995 .

[10]  H. Hosono,et al.  Novel Transparent and Electroconductive Amorphous Semiconductor: Amorphous AgSbO3 Film , 1995 .

[11]  H. Hosono,et al.  Generation of electron carriers in insulating thin film of MgIn2O4 spinel by Li+ implantation , 1994 .

[12]  W. F. Peck,et al.  GaInO3: A new transparent conducting oxide , 1994 .

[13]  H. Kawazoe,et al.  New ultraviolet‐transport electroconductive oxide, ZnGa2O4 spinel , 1994 .

[14]  Y. Ohki,et al.  New oxide phase Cd1−xYxSb2O6 with a wide band gap and high electrical conductivity , 1993 .

[15]  I. Rauf A novel method for preparing thin films with selective doping in a single evaporation step , 1993 .

[16]  H. Mizoguchi,et al.  New oxide phase with wide band gap and high electroconductivity CdGa2O4 spinel , 1993 .

[17]  H. Mizoguchi,et al.  New oxide phase with wide band gap and high electroconductivity, MgIn2O4 , 1992 .

[18]  I. Hamberg,et al.  Evaporated Sn‐doped In2O3 films: Basic optical properties and applications to energy‐efficient windows , 1986 .

[19]  T. Goto,et al.  Picosecond Dynamics of Confined Excitons and Their Optical Nonlinearities in CuCl Nanocrystals , 1995 .

[20]  R. J. Bouchard,et al.  Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4 , 1977 .