Advancing Uncooled Infrared Imagers Using An Open-Circuit Voltage Pixel

A topology leveraging a photodetector in the forward bias region generating an open-circuit voltage is proposed. Connecting the anode of the photodetector to the gate of a MOSFET device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP). Theoretical analysis outlining the effective photodetector response and performance benefits is described. An integrated circuit (IC) with direct-injection pixels modified to support the VocP front-end and analog output readout fabricated in a CMOS 0.18 μm technology is also presented. The IC allows testing of mid-wave infrared (IR) photodiodes operating in both the photocurrent and VocP modes. The VocP pixel is compared to a traditional reverse bias current mode photodetector configuration. Simulation, modeling, and measurement show improved sensitivity and faster response time for the VocP over direct photocurrent detection.

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