论文信息 - V/sub th/ fluctuation induced by statistical variation of pocket dopant profile

V/sub th/ fluctuation induced by statistical variation of pocket dopant profile

This paper studies effect of pocket (halo) profile on V/sub th/ fluctuation due to statistical dopant variation by measurement and simulation. A pocket profile significantly enhances V/sub th/ fluctuation by a factor of >15% at worst even if the implantation process variations would be negligible. This is because pocket dopants shrink the area which controls V/sub th/.

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