Low pressure‐MOCVD growth of Ga0.47In0.53As–InP heterojunction and superlattices

We report the latest results of a continuing study of low pressure‐metal–organic chemical vapor deposition (LP‐MOCVD) growth of InP and Ga0.47In0.53As–InP heterojunctions and superlattices, which describe the general growth of InP and GaInAs with specific application to quantum well heterostructure. A study of the sources and control of residual impurities in InP and Ga0.47In0.53As, the effects of source purity upon residual impurities, mobility, and 2 K PL intensity are detailed. Total impurity concentrations as low as 6×1014 cm−3 for InP and 3×1014 cm−3 for Ga0.47In0.53As have been obtained. Mobility as high as=μ (300)=5350, μ (77)=60 000 cm2 V−1 s−1 for InP, and μ (300)=12 000, μ (77)=60 000, μ (2)=100 000 cm2 V−1 s−1 for GaInAs layers have been measured.