论文信息 - Dislocations introduced in n-GaN at room temperature cause conductivity inversion - 字舞流文

Dislocations introduced in n-GaN at room temperature cause conductivity inversion

S. Pearton | In‐Hwan Lee | I. Shchemerov | E. Yakimov | A. Vasilev | A. Kochkova | A. Polyakov | A. V. Chernyh | P. Vergeles | I. Shchemerov