Effects of work-function variation on analog figures-of-merits of inversion-mode and junctionless nanowire transistors

We investigate the analog figures-of-merits (FOMs) of inversion-mode and junctionless nanowire transistors regarding to the gate metal work-function variation using 3D TCAD simulations. The junctionless device shows more immunity to work-function variation on analog FOMs compared to the inversion-mode counterpart. The correlation between parameters affects the immunity of variation on analog FOMs. Compared to the inversion-mode devices, the overall variation in JL devices are less with weak correlation between transconductance and the gate capacitance resulting in similar cut-off frequency characteristics.

[1]  Abhinav Kranti,et al.  Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off , 2010, IEEE Transactions on Circuits and Systems I: Regular Papers.

[2]  Ming-Long Fan,et al.  Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach , 2010, IEEE Electron Device Letters.

[3]  K. Banerjee,et al.  Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design , 2010, IEEE Transactions on Electron Devices.

[4]  Jason C. S. Woo,et al.  Channel engineering for analog device design in deep submicron CMOS technology for system on chip applications , 2002 .

[5]  A. Mercha,et al.  Double-Gate finFETs as a CMOS Technology Downscaling Option: An RF Perspective , 2007, IEEE Transactions on Electron Devices.

[7]  G. Paasch,et al.  A Modified Local Density Approximation. Electron Density in Inversion Layers , 1982 .

[8]  Andrew R. Brown,et al.  Impact of Metal Gate Granularity on Threshold Voltage Variability: A Full-Scale Three-Dimensional Statistical Simulation Study , 2010, IEEE Electron Device Letters.

[9]  G. Iannaccone,et al.  An Approach Based on Sensitivity Analysis for the Evaluation of Process Variability in Nanoscale MOSFETs , 2011, IEEE Transactions on Electron Devices.

[10]  Abhijit Mallik,et al.  Comparison of Random Dopant and Gate-Metal Workfunction Variability Between Junctionless and Conventional FinFETs , 2014, IEEE Electron Device Letters.

[11]  Andrew R. Brown,et al.  Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study , 2001 .

[12]  G. A. Armstrong,et al.  High-Performance Junctionless MOSFETs for Ultralow-Power Analog/RF Applications , 2012, IEEE Electron Device Letters.

[13]  Chi-Woo Lee,et al.  Nanowire transistors without junctions. , 2010, Nature nanotechnology.