Quantitative strain analysis of flip-chip electronic packages using phase-shifting moiré interferometry

Abstract In order to gauge the reliability of electronic packages, it is valuable to analyze thermally induced displacements and strains around bimaterial corners and within interconnections. The increased demand for computing performance has created increasingly complex electronic packages with miniaturized features, making it increasingly difficult to extract these quantities. Often, material properties at these length scales are not fully known, making modeling and simulation problematic. Thus, determining displacements and strains experimentally is attractive. In this study, an advanced flip-chip package with fine interconnection features was analyzed using phase-shifting moire interferometry (PSMI) in conjunction with image analysis software developed for this purpose. Before the analysis, PSMI was qualified using an isotropic solid undergoing uniform thermal contraction, which yielded a displacement precision of ±4 nm. Then a high-magnification, high-resolution displacement and strain analysis was performed for a small cross-sectional region of the flip-chip package containing 20–100 μm sized features. The analysis quantifies these results and gives displacements and strains obtained by differentiating the displacement data using a strain-energy-based finite element formulation.