Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm2 V−1 s−1 and low sub-threshold swing of 0.12 V dec−1. Excellent positive and negative bias stress stabilities were also obtained. When positive bias temperature stress (PBTS) stability was tested from 40 to 80 °C for 104 s, the threshold voltages (VTH) of the device using the 6 nm-thick IGZO channel shifted negatively, and the VTH shifts increased from −0.5 to −6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism.

[1]  Hee‐Ok Kim,et al.  Effect of hydrogen diffusion in an In–Ga–Zn–O thin film transistor with an aluminum oxide gate insulator on its electrical properties , 2018, RSC advances.

[2]  David-Wei Zhang,et al.  Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors , 2018, Nanoscale Research Letters.

[3]  Nak-Jin Seong,et al.  Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In-Ga-Zn-O Active Channels Prepared by Atomic-Layer Deposition. , 2017, ACS applied materials & interfaces.

[4]  Jin-seong Park,et al.  Flexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Deposition. , 2016, ACS applied materials & interfaces.

[5]  J. Park,et al.  A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors , 2016 .

[6]  J. Elam,et al.  Atomic layer deposition-Sequential self-limiting surface reactions for advanced catalyst "bottom-up" synthesis , 2016 .

[7]  Shi-Jin Ding,et al.  Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 Thin-Film Transistors by Low-Temperature Annealing in Air , 2016, IEEE Transactions on Electron Devices.

[8]  Jae Kyeong Jeong,et al.  Dynamics of Threshold Voltage Instability in IGZO TFTs: Impact of High Pressurized Oxygen Treatment on the Activation Energy Barrier , 2016, IEEE Transactions on Electron Devices.

[9]  Sung‐Min Yoon,et al.  Characterization of negative bias-illumination-stress stability for transparent top-gate In-Ga-Zn-O thin-film transistors with variations in the incorporated oxygen content , 2015 .

[10]  Jianhua Zhang,et al.  Temperature-dependent field-effect measurements method to illustrate the relationship between negative bias illumination stress stability and density of states of InZnO-TFTs with different channel layer thickness , 2015 .

[11]  Sung-Jin Choi,et al.  Effect of direct current sputtering power on the behavior of amorphous indium-gallium- zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation , 2015 .

[12]  Yongtaek Hong,et al.  Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress , 2015 .

[13]  W. Stickle,et al.  Role of Self-Assembled Monolayers on Improved Electrical Stability of Amorphous In-Ga-Zn-O Thin-Film Transistors , 2014, 1408.0330.

[14]  S. Bent,et al.  Correlating Growth Characteristics in Atomic Layer Deposition with Precursor Molecular Structure: The Case of Zinc Tin Oxide , 2014 .

[15]  C. Hwang,et al.  Comparative studies on electrical bias temperature instabilities of In–Ga–Zn–O thin film transistors with different device configurations , 2013 .

[16]  Mikko Ritala,et al.  Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends , 2013 .

[17]  Roy G. Gordon,et al.  Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors , 2012 .

[18]  Hyun Jae Kim,et al.  Effects of high‐pressure H2O‐annealing on amorphous IGZO thin‐film transistors , 2011 .

[19]  Jae Kyeong Jeong,et al.  Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors , 2011 .

[20]  M. Nakata,et al.  Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors , 2009 .

[21]  Hideo Hosono,et al.  Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing , 2008 .

[22]  Hyuck-In Kwon,et al.  Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors , 2008 .

[23]  Yeon-Gon Mo,et al.  Control of threshold voltage in ZnO-based oxide thin film transistors , 2008 .

[24]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[25]  Tuo-Hung Hou,et al.  Amorphous InGaZnO Thin-Film Transistors Compatible With Roll-to-Roll Fabrication at Room Temperature , 2012, IEEE Electron Device Letters.

[26]  E. Fortunato,et al.  Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances , 2012, Advanced materials.