Properties of palladium doped tin oxide thin films for gas sensors grown by PLD method combined with sputtering process

Abstract The gas sensors based on tin dioxide (SnO 2 ) thin films and doped with different amount of palladium (Pd) were synthesized by a new developed preparation system using the pulsed Nd:YAG (532 nm) laser deposition method combined with d.c. sputtering. The Pd-doped SnO 2 (SnO 2 –Pd) thin films have been grown on Si (1 0 0) and alumina (Al 2 O 3 ) substrates using SnO 2 targets. The composition ratio and the bonding states of SnO 2 –Pd thin films were characterized by an X-ray photoelectron spectroscopy. Surface morphology and structure of the films have been obtained by atomic force microscope and glancing-angle X-ray diffraction measurement. The effects of the sputtering discharge power of Pd on the properties of the SnO 2 –Pd thin films are discussed. The gas sensing properties of SnO 2 –Pd thin films prepared by this new pulsed laser deposition (PLD) method are also investigated over the temperature range 200–600 °C, using 0.31 vol.%H 2 as a test gas. Experimental results suggest that SnO 2 –Pd thin films can be prepared using this new PLD method. Atomic concentration ratio of Pd in the SnO 2 –Pd film depends on the sputtering discharge power of Pd and varies from 1 to 6%. The maximum sensitivity of SnO 2 –Pd thin film gas sensor synthesized by this new PLD method is approximately 3 times higher than that of pure SnO 2 thin film gas sensor grown by the conventional PLD method.

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