Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

Using a classification scheme based on carrier confinement type (electrostatic and spatial) and the degrees of freedom of the mobile carriers (3DOF, 2DOF, and 1DOF), strain effects on 3DOF to 1DOF silicon logic devices are compared from quantum confinement and device geometry perspectives. For these varied device geometries and types, the effects of strain-induced band splitting and band warping on the modification of the average conductivity effective mass and carrier scattering rates are evaluated. It is shown that the beneficial effects of strain-induced band splitting are the most effective for devices with little or no initial band splitting and become less so for devices with already large built-in band splitting. For these devices with large splitting energy, the potential for strain-induced carrier conductivity mass reduction through repopulation of lower energy bands and the suppression of optical intervalley phonon scattering are limited. On the other hand, for all devices without spatial confin...

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