Single-Event Transient Effect on a Self-Biased Ring-Oscillator PLL and an LC PLL Fabricated in SOS Technology

The single-event transient effect on a ring-oscillator based and an LC-tank based phased-locked loop circuits fabricated in a 0.25 μm silicon-on-sapphire technology is analyzed with circuit-level simulations followed by laser experiments. Advantages of the LC-tank based circuits in terms of single-event tolerance over the ring-oscillator based circuits are discussed.

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