Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of Channeling
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T. Lohner | Z. Zolnai | A. Ster | M. Posselt | G. Battistig | N. Q. Khánh | E. Kótai | J. Gyulai
暂无分享,去创建一个
T. Lohner | Z. Zolnai | A. Ster | M. Posselt | G. Battistig | N. Q. Khánh | E. Kótai | J. Gyulai