Rhenium-based low resistivity and low annealing temperature ohmic contacts to n-GaN

We report an ohmic contact metallization scheme for n-GaN based on a Re–Al–Ni–Au multilayer stack that offers low-resistivity and provides better edge sharpness and lower surface roughness at reduced annealing temperature compared to standard Ti–Al-based metallization. We studied three sets of samples with Re thicknesses of 10, 30, and 60 nm and measured specific contact resistances using the circular transmission line method. We obtained reliable ohmic contacts with specific contact resistance of the order of 10−6 Ω cm2 at 550 °C temperature with the contact stack having a large annealing temperature window of >300 °C for resistivity below 5 × 10−6 Ω cm2. The lowest contact resistivity, below 10−7 Ω cm2, is achieved at annealing temperature around 650–700 °C. A reduction in surface roughness by a factor of 4, with excellent edge definition for Re >30 nm thickness is observed as compared to Ti–Al contacts. Grazing incidence x-ray diffraction and electron dispersive x-ray spectroscopy (EDS) show intermetallic phases of RexNy, Re–Al–Ni, Al–Re, and Al–Au being formed. Atomic force microscope and EDS measurements show the formation of crystalline Re–Al–Ni agglomerates, surrounded by phases of AlAu2 and Al2Au5. The presence of Re seems to suppress the formation of viscous AlAu4 phase, thus minimizing the lateral flow of the metals and providing better edge acuity. The temperature dependence of contact resistivity suggests a field-emission mechanism for current transport across the contact. Our results show that Re-based ohmic contacts, with their lower annealing temperature and excellent edge definition, may offer a promising alternative to Ti–Al contacts.