Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes

We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ~92-98.

[1]  Shuji Nakamura,et al.  Measurement of electron overflow in 450 nm InGaN light-emitting diode structures , 2009 .

[2]  E. Schubert,et al.  Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop , 2008 .

[3]  Charles M. Lieber,et al.  Gallium Nitride-Based Nanowire Radial Heterostructures for Nanophotonics , 2004 .

[4]  Shuji Nakamura,et al.  Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes , 2008 .

[5]  Michael R. Krames,et al.  Auger recombination in InGaN measured by photoluminescence , 2007 .

[6]  Hadis Morkoç,et al.  InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes , 2010 .

[7]  Meng Zhang,et al.  Direct measurement of auger recombination in In0.1Ga0.9N/GaN quantum wells and its impact on the efficiency of In0.1Ga0.9N/GaN multiple quantum well light emitting diodes , 2009 .

[8]  Hadis Morkoç,et al.  Ballistic transport in InGaN-based LEDs: impact on efficiency , 2011 .

[9]  Choon-Gi Choi,et al.  Graphene transparent electrode for enhanced optical power and thermal stability in GaN light-emitting diodes , 2013, Nanotechnology.

[10]  G A Botton,et al.  p-Type modulation doped InGaN/GaN dot-in-a-wire white-light-emitting diodes monolithically grown on Si(111). , 2011, Nano letters.

[11]  Chunhui Yan,et al.  Investigation of the Nonthermal Mechanism of Efficiency Rolloff in InGaN Light-Emitting Diodes , 2008, IEEE Transactions on Electron Devices.

[12]  Kai Cui,et al.  High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes , 2012, IEEE Photonics Technology Letters.

[13]  Hiroto Sekiguchi,et al.  Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate , 2010 .

[14]  S. Aloni,et al.  Complete composition tunability of InGaN nanowires using a combinatorial approach. , 2007, Nature materials.

[15]  Kai Cui,et al.  Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon , 2012, Nanotechnology.

[16]  P. Bhattacharya,et al.  Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.

[17]  Hyeyoung Ahn,et al.  Strong green photoluminescence from InxGa1-xN/GaN nanorod arrays. , 2009, Optics express.

[18]  Salah M. Bedair,et al.  Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures , 2007 .

[19]  Hadis Morkoç,et al.  On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers , 2008 .

[20]  Joachim Piprek,et al.  Electron leakage effects on GaN-based light-emitting diodes , 2010 .

[21]  Zetian Mi,et al.  High efficiency green, yellow, and amber emission from InGaN/GaN dot-in-a-wire heterostructures on Si"111… , 2010 .

[22]  Nicolas Grandjean,et al.  InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K , 2000 .

[23]  E. Fred Schubert,et al.  Origin of efficiency droop in GaN-based light-emitting diodes , 2007 .

[24]  Jiunn-Yi Chu,et al.  High Brightness GaN Vertical Light-Emitting Diodes on Metal Alloy for General Lighting Application , 2010, Proceedings of the IEEE.

[25]  B. J. Kim,et al.  Three-dimensional graphene foam-based transparent conductive electrodes in GaN-based blue light-emitting diodes , 2013 .

[26]  P. Bhattacharya,et al.  Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics. , 2011, Nano letters.

[27]  Charles M. Lieber,et al.  Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes. , 2005, Nano letters.

[28]  Zetian Mi,et al.  Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes. , 2013, Nano letters.

[29]  Dong-Hyun Kim,et al.  Temperature and thermal characteristics of InGaN/GaN vertical light-emitting diodes on electroplated copper , 2011 .

[30]  K. Kishino,et al.  InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate , 2004 .

[31]  Kai Cui,et al.  Full-color InGaN/GaN dot-in-a-wire light emitting diodes on silicon , 2011, Nanotechnology.

[32]  Le Si Dang,et al.  Submicrometre resolved optical characterization of green nanowire-based light emitting diodes , 2011, Nanotechnology.

[33]  Bo E. Sernelius,et al.  Defect related issues in the current roll-off in InGaN based light emitting diodes , 2007 .