Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

A low-frequency noise (LFN) analysis technique is introduced, based on the autocorrelation of the LFN spectra in terms of frequency, biasing, and temperature. This technique reveals information about the mechanisms behind 1/<inline-formula> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> noise that is difficult to obtain otherwise. These correlation analyses provide strong evidence that the LFN of both nMOS and pMOS transistors is mainly composed of the superposition of thermally activated random telegraph signals (RTSs). The methodology enables quantification and validation of old and new LFN models, and, therefore, helps to clarify the relation between RTS and 1/<inline-formula> <tex-math notation="LaTeX">${f}$ </tex-math></inline-formula> that is still frequently debated in the literature.

[1]  B. Kaczer,et al.  A unified perspective of RTN and BTI , 2014, 2014 IEEE International Reliability Physics Symposium.

[2]  Xin Li,et al.  Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables , 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference.

[3]  Gerard Ghibaudo,et al.  Evolution of low frequency noise and noise variability through CMOS bulk technology nodes , 2013 .

[4]  B. Kaczer,et al.  Statistical Model for MOSFET Bias Temperature Instability Component Due to Charge Trapping , 2011, IEEE Transactions on Electron Devices.

[5]  Hans P. Tuinhout,et al.  A Physics-Based Statistical RTN Model for the Low Frequency Noise in MOSFETs , 2016, IEEE Transactions on Electron Devices.

[6]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[7]  Gilson I. Wirth,et al.  A physics-based RTN variability model for MOSFETs , 2014, 2014 IEEE International Electron Devices Meeting.

[8]  Mikael Östling,et al.  1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs , 2003 .

[9]  T. Grasser,et al.  The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[10]  A. Abidi,et al.  Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures , 1994 .

[11]  R. Havens,et al.  Noise modeling for RF CMOS circuit simulation , 2003 .

[12]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[13]  G. Ghibaudo,et al.  Low-Frequency Noise Investigation and Noise Variability Analysis in High- $k$/Metal Gate 32-nm CMOS Transistors , 2011, IEEE Transactions on Electron Devices.

[14]  L.K.J. Vandamme,et al.  What Do We Certainly Know About $\hbox{1}/f$ Noise in MOSTs? , 2008, IEEE Transactions on Electron Devices.

[15]  Fang Wang,et al.  Model for random telegraph signals in sub-micron MOSFETS , 2003 .

[16]  Charles Surya,et al.  A thermal activation model for 1/ƒy noise in Si-MOSFETs , 1988 .

[17]  Ralf Brederlow,et al.  Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions , 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

[18]  Cor Claeys,et al.  On the flicker noise in submicron silicon MOSFETs , 1999 .

[19]  Eric A. M. Klumperink,et al.  Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution , 2005 .

[20]  T. Grasser,et al.  The statistical analysis of individual defects constituting NBTI and its implications for modeling DC- and AC-stress , 2010, 2010 IEEE International Reliability Physics Symposium.

[21]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[22]  Angelos Antonopoulos,et al.  Measurement and modelling of 1/f noise in 180 nm NMOS and PMOS devices , 2010, Proceedings of Papers 5th European Conference on Circuits and Systems for Communications (ECCSC'10).

[23]  A. Theuwissen,et al.  Random Telegraph Signal in CMOS Image Sensor Pixels , 2006, 2006 International Electron Devices Meeting.

[24]  Gerard Ghibaudo,et al.  Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .

[25]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[26]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .