论文信息 - The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy - 字舞流文

The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy

U. Mishra | J. Speck | I. Smorchkova | T. Mates | C. Poblenz | P. Fini | B. Heying | E. Haus