High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
暂无分享,去创建一个
Hong Wang | Masayuki Abe | Masayuki Abe | Dimitris Pavlidis | Geok Ing Ng | Kumar Manoj | Kian Siong Ang | Chong Jin | Noriaki Kogushi | René Hofstetter | Louis Nicholas Retnam | Chong Jin | Kumar Manoj
[1] Y. Uemoto,et al. AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure , 2005, IEEE Transactions on Electron Devices.
[2] Sir B. Rafol,et al. 640 /spl times/ 512 pixel long-wavelength infrared narrowband, multiband, and broadband QWIP focal plane arrays , 2003 .
[3] Hans L. Hartnagel,et al. InGaAs/InP thermoelectric infrared sensor utilizing surface bulk micromachining technology , 1997 .
[4] Andres Udal,et al. High Phonon-Drag Thermoelectric Efficiency of SiC at Low Temperatures , 2004 .
[5] Masayuki Abe,et al. Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application , 2010, IEICE Trans. Electron..
[6] Yasushi Nakajima,et al. 120 × 90 element thermoelectric infrared focal plane array with precisely patterned Au-black absorber , 2000 .
[7] Masayuki Abe,et al. Recent advances inultra-high-speed HEMT technology , 1986 .